Browsing by Subject "MOS devices"
Now showing items 1-4 of 4
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Article
Convergence analysis of an hp finite element method for singularly perturbed transmission problems in smooth domains
(2013)We consider a two-dimensional singularly perturbed transmission problem with two different diffusion coefficients, in a domain with smooth (analytic) boundary. The solution will contain boundary layers only in the part of ...
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Article
Low temperature and cost-effective growth of vertically aligned carbon nanofibers using spin-coated polymer-stabilized palladium nanocatalysts
(2015)We describe a fast and cost-effective process for the growth of carbon nanofibers (CNFs) at a temperature compatible with complementary metal oxide semiconductor technology, using highly stable polymer-Pd nanohybrid colloidal ...
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Article
Pb doping of In2O3 and their conversion to highly conductive PbS/In2S3-3xO3x nanowires with infra red emission
(2016)We have grown Pb doped In2O3 nanowires at 800°C which have the cubic bixbyite crystal structure of In2O3 and contain orthorhombic α-PbO. These had resistances up to ≈10 Ω and exhibited photoluminescence at 2.5 eV but we ...
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Article
Pb doping of In2O3 and their conversion to highly conductive PbS/In2S3-3xO3x nanowires with infra red emission
(2016)We have grown Pb doped In2O3 nanowires at 800°C which have the cubic bixbyite crystal structure of In2O3 and contain orthorhombic α-PbO. These had resistances up to ≈10 Ω and exhibited photoluminescence at 2.5 eV but we ...